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2N1175B PNP Transistor

The 2N1175B is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2N1175B transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N1175B transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2N1175B transistor as follows.

Circuit diagram symbol of the 2N1175B transistor

2N1175B Transistor Specification

Transistor Code 2N1175B
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Germanium(GE)
Package TO5
Collector Power Dissipation (Maximum) PC 0.2W
Collector-Base Voltage (Maximum) VCB 35V
Collector-Emitter Voltage (Maximum) VCE 25V
Collector Current (Maximum) IC 0.2A
Operating Junction Temperature (Maximum) TJ 100°C
Emitter-Base Voltage (Maximum) VEB 10V
Forward Current Transfer Ratio (hFE Value) 70
Transition Frequency FT 0.3MHz
Collector Capacitance CC 70pF

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