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2N1173 NPN Transistor

The 2N1173 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N1173 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N1173 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N1173 transistor as follows.

Circuit diagram symbol of the 2N1173 transistor

2N1173 Transistor Specification

Transistor Code 2N1173
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Germanium(GE)
Package TO29
Collector Power Dissipation (Maximum) PC 0.25W
Collector-Base Voltage (Maximum) VCB 35V
Collector-Emitter Voltage (Maximum) VCE 20V
Collector Current (Maximum) IC 0.2A
Operating Junction Temperature (Maximum) TJ 100°C
Emitter-Base Voltage (Maximum) VEB 35V
Forward Current Transfer Ratio (hFE Value) 50
Transition Frequency FT 3MHz
Collector Capacitance CC 25pF

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More Transistors Datasheets in TO29 Package

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