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2N1170 NPN Transistor

The 2N1170 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N1170 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N1170 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N1170 transistor as follows.

Circuit diagram symbol of the 2N1170 transistor

2N1170 Transistor Specification

Transistor Code 2N1170
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Germanium(GE)
Package TO5
Collector Power Dissipation (Maximum) PC 0.15W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 20V
Collector Current (Maximum) IC 0.4A
Operating Junction Temperature (Maximum) TJ 85°C
Emitter-Base Voltage (Maximum) VEB 40V
Forward Current Transfer Ratio (hFE Value) 20
Transition Frequency FT 3MHz

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