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2N1165A PNP Transistor

The 2N1165A is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2N1165A transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N1165A transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2N1165A transistor as follows.

Circuit diagram symbol of the 2N1165A transistor

2N1165A Transistor Specification

Transistor Code 2N1165A
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Germanium(GE)
Package TO3
Collector Power Dissipation (Maximum) PC 106W
Collector-Base Voltage (Maximum) VCB 80V
Collector-Emitter Voltage (Maximum) VCE 60V
Collector Current (Maximum) IC 25A
Operating Junction Temperature (Maximum) TJ 100°C
Emitter-Base Voltage (Maximum) VEB 40V
Forward Current Transfer Ratio (hFE Value) 15
Transition Frequency FT 0.1MHz

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