2N1162A PNP Transistor

The 2N1162A is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2N1162A transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N1162A transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2N1162A transistor as follows.

2N1162A Transistor Specification

Transistor Code		2N1162A
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Germanium(GE)
Package		TO3
Collector Power Dissipation (Maximum)	PC	106W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	35V
Collector Current (Maximum)	IC	25A
Operating Junction Temperature (Maximum)	TJ	100°C
Emitter-Base Voltage (Maximum)	VEB	25V
Forward Current Transfer Ratio (hFE Value)		15
Transition Frequency	FT	0.1MHz

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