2N1160 PNP Transistor

The 2N1160 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2N1160 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N1160 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2N1160 transistor as follows.

2N1160 Transistor Specification

Transistor Code		2N1160
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Germanium(GE)
Package		TO3
Collector Power Dissipation (Maximum)	PC	90W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	100°C
Emitter-Base Voltage (Maximum)	VEB	20V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	0.1MHz

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