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2N1160 PNP Transistor

The 2N1160 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2N1160 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N1160 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2N1160 transistor as follows.

Circuit diagram symbol of the 2N1160 transistor

2N1160 Transistor Specification

Transistor Code 2N1160
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Germanium(GE)
Package TO3
Collector Power Dissipation (Maximum) PC 90W
Collector-Base Voltage (Maximum) VCB 80V
Collector-Emitter Voltage (Maximum) VCE 60V
Collector Current (Maximum) IC 5A
Operating Junction Temperature (Maximum) TJ 100°C
Emitter-Base Voltage (Maximum) VEB 20V
Forward Current Transfer Ratio (hFE Value) 20
Transition Frequency FT 0.1MHz

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