2N1130 PNP Transistor

The 2N1130 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2N1130 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N1130 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2N1130 transistor as follows.

2N1130 Transistor Specification

Transistor Code		2N1130
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Germanium(GE)
Package		TO30
Collector Power Dissipation (Maximum)	PC	0.15W
Collector-Base Voltage (Maximum)	VCB	30V
Collector Current (Maximum)	IC	0.25A
Operating Junction Temperature (Maximum)	TJ	85°C
Forward Current Transfer Ratio (hFE Value)		50
Transition Frequency	FT	0.3MHz
Collector Capacitance	CC	80pF

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