2N1040-1 PNP Transistor

The 2N1040-1 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2N1040-1 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N1040-1 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2N1040-1 transistor as follows.

2N1040-1 Transistor Specification

Transistor Code		2N1040-1
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Germanium(GE)
Package		TO31
Collector Power Dissipation (Maximum)	PC	20W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	3A
Operating Junction Temperature (Maximum)	TJ	95°C
Emitter-Base Voltage (Maximum)	VEB	20V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	0.225MHz
Collector Capacitance	CC	200pF

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