2N1016E NPN Transistor

The 2N1016E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N1016E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N1016E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N1016E transistor as follows.

2N1016E Transistor Specification

Transistor Code		2N1016E
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		MT38-2
Collector Power Dissipation (Maximum)	PC	150W
Collector-Base Voltage (Maximum)	VCB	250V
Collector-Emitter Voltage (Maximum)	VCE	250V
Collector Current (Maximum)	IC	7.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	25V
Forward Current Transfer Ratio (hFE Value)		10
Transition Frequency	FT	0.5MHz

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More Transistors Datasheets in MT38-2 Package

2N1016D NPN Transistor 2N1016F NPN Transistor 2N1015D NPN Transistor 2N1016B NPN Transistor 2N1015E NPN Transistor 2N1015A NPN Transistor 2N1015C NPN Transistor 2N1015 NPN Transistor 2N1016C NPN Transistor 2N1015B NPN Transistor 2N1016A NPN Transistor 2N1015F NPN Transistor 2N1016 NPN Transistor