2N1015E NPN Transistor

The 2N1015E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N1015E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N1015E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N1015E transistor as follows.

2N1015E Transistor Specification

Transistor Code		2N1015E
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		MT38-2
Collector Power Dissipation (Maximum)	PC	150W
Collector-Base Voltage (Maximum)	VCB	250V
Collector-Emitter Voltage (Maximum)	VCE	250V
Collector Current (Maximum)	IC	7.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	25V
Forward Current Transfer Ratio (hFE Value)		10
Transition Frequency	FT	0.5MHz

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More Transistors Datasheets in MT38-2 Package

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