2N1015D NPN Transistor

The 2N1015D is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N1015D transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N1015D transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N1015D transistor as follows.

2N1015D Transistor Specification

Transistor Code		2N1015D
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		MT38-2
Collector Power Dissipation (Maximum)	PC	150W
Collector-Base Voltage (Maximum)	VCB	200V
Collector-Emitter Voltage (Maximum)	VCE	200V
Collector Current (Maximum)	IC	7.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	25V
Forward Current Transfer Ratio (hFE Value)		10
Transition Frequency	FT	0.5MHz

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More Transistors Datasheets in MT38-2 Package

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