2N1008B PNP Transistor

The 2N1008B is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2N1008B transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N1008B transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2N1008B transistor as follows.

2N1008B Transistor Specification

Transistor Code		2N1008B
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Germanium(GE)
Package		TO5
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	55V
Collector Current (Maximum)	IC	0.3A
Operating Junction Temperature (Maximum)	TJ	85°C
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	0.4MHz

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