2N1006 NPN Transistor

The 2N1006 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N1006 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N1006 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N1006 transistor as follows.

2N1006 Transistor Specification

Transistor Code		2N1006
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO5
Collector Power Dissipation (Maximum)	PC	0.15W
Collector-Base Voltage (Maximum)	VCB	15V
Collector-Emitter Voltage (Maximum)	VCE	15V
Collector Current (Maximum)	IC	0.025A
Operating Junction Temperature (Maximum)	TJ	175°C
Forward Current Transfer Ratio (hFE Value)		25

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