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2G30 PNP Transistor

The 2G30 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2G30 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2G30 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2G30 transistor as follows.

Circuit diagram symbol of the 2G30 transistor

2G30 Transistor Specification

Transistor Code 2G30
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Germanium(GE)
Package TO1
Collector Power Dissipation (Maximum) PC 0.09W
Collector-Base Voltage (Maximum) VCB 5V
Collector-Emitter Voltage (Maximum) VCE 5V
Collector Current (Maximum) IC 0.025A
Operating Junction Temperature (Maximum) TJ 100°C
Emitter-Base Voltage (Maximum) VEB 1V
Forward Current Transfer Ratio (hFE Value) 30
Transition Frequency FT 3.5MHz
Collector Capacitance CC 27pF

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