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2DI75D-050A NPN Transistor

The 2DI75D-050A is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2DI75D-050A transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2DI75D-050A transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2DI75D-050A transistor as follows.

Circuit diagram symbol of the 2DI75D-050A transistor

2DI75D-050A Transistor Specification

Transistor Code 2DI75D-050A
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package M208
Collector Power Dissipation (Maximum) PC 350W
Collector-Base Voltage (Maximum) VCB 600V
Collector-Emitter Voltage (Maximum) VCE 450V
Collector Current (Maximum) IC 75A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 7V
Forward Current Transfer Ratio (hFE Value) 100

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More Transistors Datasheets in M208 Package

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