26DB080D NPN Transistor

The 26DB080D is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 26DB080D transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 26DB080D transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 26DB080D transistor as follows.

26DB080D Transistor Specification

Transistor Code		26DB080D
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		X240
Collector Power Dissipation (Maximum)	PC	300W
Collector-Base Voltage (Maximum)	VCB	1200V
Collector-Emitter Voltage (Maximum)	VCE	800V
Collector Current (Maximum)	IC	37A
Operating Junction Temperature (Maximum)	TJ	200°C

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