The 1DI75E-100 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 1DI75E-100 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.
The 1DI75E-100 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.
Circuit diagram symbol of the 1DI75E-100 transistor as follows.
| Transistor Code | 1DI75E-100 | |
|---|---|---|
| Transistor Type | BJT | |
| Transistor Polarity | NPN | |
| Transistor Material | Silicon(SI) | |
| Package | M206 | |
| Collector Power Dissipation (Maximum) | PC | 500W |
| Collector-Base Voltage (Maximum) | VCB | 1000V |
| Collector-Emitter Voltage (Maximum) | VCE | 1000V |
| Collector Current (Maximum) | IC | 75A |
| Operating Junction Temperature (Maximum) | TJ | 150°C |
| Emitter-Base Voltage (Maximum) | VEB | 10V |
| Forward Current Transfer Ratio (hFE Value) | 100 | |
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