The 1DI200E-055 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 1DI200E-055 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.
The 1DI200E-055 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.
Circuit diagram symbol of the 1DI200E-055 transistor as follows.
| Transistor Code | 1DI200E-055 | |
|---|---|---|
| Transistor Type | BJT | |
| Transistor Polarity | NPN | |
| Transistor Material | Silicon(SI) | |
| Package | M207 | |
| Collector Power Dissipation (Maximum) | PC | 1000W |
| Collector-Base Voltage (Maximum) | VCB | 600V |
| Collector-Emitter Voltage (Maximum) | VCE | 600V |
| Collector Current (Maximum) | IC | 200A |
| Operating Junction Temperature (Maximum) | TJ | 150°C |
| Emitter-Base Voltage (Maximum) | VEB | 6V |
| Forward Current Transfer Ratio (hFE Value) | 70 | |
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