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15GN01MA-TL-E NPN Transistor

The 15GN01MA-TL-E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 15GN01MA-TL-E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 15GN01MA-TL-E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 15GN01MA-TL-E transistor as follows.

Circuit diagram symbol of the 15GN01MA-TL-E transistor

15GN01MA-TL-E Transistor Specification

Transistor Code 15GN01MA-TL-E
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT323
Transistor SMD Code ZA
Collector Power Dissipation (Maximum) PC 0.4W
Collector-Base Voltage (Maximum) VCB 15V
Collector-Emitter Voltage (Maximum) VCE 8V
Collector Current (Maximum) IC 0.05A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 3V
Forward Current Transfer Ratio (hFE Value) 200
Transition Frequency FT 1000MHz
Collector Capacitance CC 1.1pF

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