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13009T NPN Transistor

The 13009T is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 13009T transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 13009T transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 13009T transistor as follows.

Circuit diagram symbol of the 13009T transistor

13009T Transistor Specification

Transistor Code 13009T
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO220
Collector Power Dissipation (Maximum) PC 95W
Collector-Base Voltage (Maximum) VCB 700V
Collector-Emitter Voltage (Maximum) VCE 400V
Collector Current (Maximum) IC 11A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 9V
Forward Current Transfer Ratio (hFE Value) 15
Transition Frequency FT 5MHz

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