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13005DL NPN Transistor

The 13005DL is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 13005DL transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 13005DL transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 13005DL transistor as follows.

Circuit diagram symbol of the 13005DL transistor

13005DL Transistor Specification

Transistor Code 13005DL
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT82 TO126
Collector Power Dissipation (Maximum) PC 32W
Collector-Base Voltage (Maximum) VCB 400V
Collector-Emitter Voltage (Maximum) VCE 200V
Collector Current (Maximum) IC 4.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 9V
Forward Current Transfer Ratio (hFE Value) 15
Transition Frequency FT 5MHz

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More Transistors Datasheets in SOT82_TO126 Package