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13003DW NPN Transistor

The 13003DW is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 13003DW transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 13003DW transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 13003DW transistor as follows.

Circuit diagram symbol of the 13003DW transistor

13003DW Transistor Specification

Transistor Code 13003DW
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO-251 TO-126 TO-92
Collector Power Dissipation (Maximum) PC 35W
Collector-Base Voltage (Maximum) VCB 450V
Collector-Emitter Voltage (Maximum) VCE 400V
Collector Current (Maximum) IC 10A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 9V
Forward Current Transfer Ratio (hFE Value) 10
Transition Frequency FT 4MHz

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More Transistors Datasheets in TO-251_TO-126_TO-92 Package

13002AH 13002AH NPN Transistor 13003ADA 13003ADA NPN Transistor 13003BS 13003BS NPN Transistor 13003DH 13003DH NPN Transistor 13003EDA 13003EDA NPN Transistor