The 13003DH is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 13003DH transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.
The 13003DH transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.
Circuit diagram symbol of the 13003DH transistor as follows.
| Transistor Code | 13003DH | |
|---|---|---|
| Transistor Type | BJT | |
| Transistor Polarity | NPN | |
| Transistor Material | Silicon(SI) | |
| Package | TO-251 TO-126 TO-92 | |
| Collector Power Dissipation (Maximum) | PC | 50W |
| Collector-Base Voltage (Maximum) | VCB | 450V |
| Collector-Emitter Voltage (Maximum) | VCE | 400V |
| Collector Current (Maximum) | IC | 10A |
| Operating Junction Temperature (Maximum) | TJ | 150°C |
| Emitter-Base Voltage (Maximum) | VEB | 9V |
| Forward Current Transfer Ratio (hFE Value) | 10 | |
| Transition Frequency | FT | 5MHz |
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