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13003DF NPN Transistor

The 13003DF is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 13003DF transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 13003DF transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 13003DF transistor as follows.

Circuit diagram symbol of the 13003DF transistor

13003DF Transistor Specification

Transistor Code 13003DF
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO-126 TO-92
Collector Power Dissipation (Maximum) PC 50W
Collector-Base Voltage (Maximum) VCB 450V
Collector-Emitter Voltage (Maximum) VCE 400V
Collector Current (Maximum) IC 10A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 9V
Forward Current Transfer Ratio (hFE Value) 10
Transition Frequency FT 5MHz

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More Transistors Datasheets in TO-126_TO-92 Package

13003DE 13003DE NPN Transistor 4124D 4124D NPN Transistor