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1129NTV1 NPN Transistor

The 1129NTV1 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 1129NTV1 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 1129NTV1 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 1129NTV1 transistor as follows.

Circuit diagram symbol of the 1129NTV1 transistor

1129NTV1 Transistor Specification

Transistor Code 1129NTV1
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Collector Power Dissipation (Maximum) PC 0.075W
Collector-Base Voltage (Maximum) VCB 15V
Collector-Emitter Voltage (Maximum) VCE 13V
Collector Current (Maximum) IC 0.01A
Operating Junction Temperature (Maximum) TJ 125°C
Emitter-Base Voltage (Maximum) VEB 4V
Forward Current Transfer Ratio (hFE Value) 80
Collector Capacitance CC 3pF

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